Intel Confirms 18A Process Progress, Promises High-Density SRAM Comparable to TSMC’s N2
Intel has officially dismissed rumors suggesting setbacks in the development of its 18A lithography process, confirming that its technology is advancing as planned. In a recent conference, the company announced a major breakthrough: its SRAM (Static Random-Access Memory) density has now reached levels comparable to TSMC’s N2 (2nm) process. This achievement contradicts earlier speculation that Intel was struggling to keep up with its competitors.
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